Jeremy J. M. Law

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Varistha Chobpattana, Junwoo Son, Jeremy J. M. Law et al. · Applied Physics Letters · 2013 · 80 citations · Full text

Materials Science, Oxide Heterostructures, Electrical Engineering +15

A 0.13 μm CMOS technology with 193 nm lithography and Cu/low-k for high performance applications

K.K. Young, S.Y. Wu, Chung-Cheng Wu et al. · 2002 · 50 citations

Engineering, Vlsi Design, Computer Architecture +18

Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

Andrew D. Carter, William J. Mitchell, B.J. Thibeault et al. · Applied Physics Express · 2011 · 49 citations

Aluminium Nitride, Engineering, Plasma Processing +17

High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer

Cheng-Ying Huang, D. Cohen-Elias, Jeremy J. M. Law et al. · Applied Physics Letters · 2013 · 41 citations

Vertical Spacer, Semiconductor Technology, Electrical Engineering +9

Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces

Greg J. Burek, Yoontae Hwang, Andrew D. Carter et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 38 citations

Materials Science, Electrical Characteristics, Electrical Engineering +15