Varistha Chobpattana

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Varistha Chobpattana, Junwoo Son, Jeremy J. M. Law et al. · Applied Physics Letters · 2013 · 80 citations · Full text

Materials Science, Oxide Heterostructures, Electrical Engineering +15

Fixed charge in high-<i>k</i>/GaN metal-oxide-semiconductor capacitor structures

Junwoo Son, Varistha Chobpattana, Brian M. McSkimming et al. · Applied Physics Letters · 2012 · 70 citations · Full text

Materials Science, Fixed Charge States, Electrical Engineering +14

0.5 V Supply Voltage Operation of In_0.65Ga_0.35As/GaAs_0.4Sb_0.6Tunnel FET

Bijesh Rajamohanan, Rahul Pandey, Varistha Chobpattana et al. · IEEE Electron Device Letters · 2014 · 56 citations

Electrical Engineering, Staggered-gap Tfets, Engineering +10

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Susanne Stemmer, Varistha Chobpattana, Siddharth Rajan · Applied Physics Letters · 2012 · 54 citations

Electrical Engineering, Strong Frequency Dispersion, Engineering +13

Demonstration of p-type In&lt;inf&gt;0.7&lt;/inf&gt;Ga&lt;inf&gt;0.3&lt;/inf&gt;As/GaAs&lt;inf&gt;0.35&lt;/inf&gt;Sb&lt;inf&gt;0.65&lt;/inf&gt; and n-type GaAs&lt;inf&gt;0.4&lt;/inf&gt;Sb&lt;inf&gt;0.6&lt;/inf&gt;/In&lt;inf&gt;0.65&lt;/inf&gt;Ga&lt;inf&gt;0.35&lt;/inf&gt;As complimentary Heterojunction Vertical Tunnel FETs for ultra-low power logic

Rahul Pandey, Himanshu Madan, H. Liu et al. · 2015 · 47 citations

Semiconductors, P-type Tfet, Electrical Engineering +11