D. Cohen-Elias

InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection

Y. Uliel, D. Cohen-Elias, Noam Sicron et al. · Infrared Physics & Technology · 2017 · 50 citations

Engineering, Electrical Engineering, Materials Science +12

High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer

Cheng-Ying Huang, D. Cohen-Elias, Jeremy J. M. Law et al. · Applied Physics Letters · 2013 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode

D. Cohen-Elias, N. Snapi, O. Klin et al. · Applied Physics Letters · 2017 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L Valleys

Saumitra Mehrotra, Michael Povolotskyi, D. Cohen-Elias et al. · IEEE Electron Device Letters · 2013 · 28 citations

Engineering, Computer Engineering, Electrical Engineering +17

Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">$V_{\rm DD}=0.5~{\rm V}$ </tex-math></inline-formula>

Sanghoon Lee, Cheng-Ying Huang, D. Cohen-Elias et al. · IEEE Electron Device Letters · 2014 · 28 citations

Engineering, Electrical Engineering, Microelectronics +15