Cheng-Ying Huang

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

Varistha Chobpattana, Junwoo Son, Jeremy J. M. Law et al. · Applied Physics Letters · 2013 · 80 citations · Full text

Materials Science, Oxide Heterostructures, Electrical Engineering +15

High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer

Cheng-Ying Huang, D. Cohen-Elias, Jeremy J. M. Law et al. · Applied Physics Letters · 2013 · 41 citations

Vertical Spacer, Semiconductor Technology, Electrical Engineering +9

Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">$V_{\rm DD}=0.5~{\rm V}$ </tex-math></inline-formula>

Sanghoon Lee, Cheng-Ying Huang, D. Cohen-Elias et al. · IEEE Electron Device Letters · 2014 · 28 citations

Semiconductors, \Rm Dd, Electrical Engineering +14

A highly responsive hybrid photodetector based on all-inorganic 2D heterojunction consisting of Cs2Pb(SCN)2Br2 and MoS2

Kai-Lin Chu, Chiung-Han Chen, Shin-Wei Shen et al. · Chemical Engineering Journal · 2021 · 18 citations

Chemical Engineering, Engineering, Photodetectors +8

(Invited) Record-Performance In(Ga)As MOSFETS Targeting ITRS High-Performance and Low-Power Logic

M.J.W. Rodwell, Cheng-Ying Huang, Sang‐Hoon Lee et al. · ECS Transactions · 2015 · 11 citations

Low-power Electronics, Ingaas Channels, Electrical Engineering +15