B. Borot

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 171 citations

Low-power Electronics, Electrical Engineering, Millimeter Wave Technology +15

A New Combined Methodology for Write-Margin Extraction of Advanced SRAM

N. Gierczynski, B. Borot, N. Planes et al. · 2007 · 75 citations

Non-volatile Memory, Engineering, Vlsi Design +17

A functional 0.69 μm/sup 2/ embedded 6T-SRAM bit cell for 65 nm CMOS platform

F. Arnaud, F. Salvetti, D. Lenoble et al. · 2004 · 30 citations

Low Power, Electrical Engineering, Engineering +14

Low cost 65nm CMOS platform for Low Power & General Purpose applications

F. Arnaud, B. Duriez, B. Tavel et al. · 2004 · 24 citations

Low-power Electronics, Low Power, Electrical Engineering +10

Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC)

T. Devoivre, M.M. Lunenborg, C. Julien et al. · 2003 · 16 citations

Engineering, Vlsi Design, Computer Architecture +19