E. Kunnen

Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

Hans Mertens, R. Ritzenthaler, Adrian Chasin et al. · 2016 · 161 citations

Engineering, Electrical Engineering, Materials Science +17

Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors

Ray Duffy, M.J.H. van Dal, Bartek Pawlak et al. · Applied Physics Letters · 2007 · 100 citations

Engineering, Electrical Engineering, Materials Science +17

Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

M.J.H. van Dal, Nadine Collaert, G. Doornbos et al. · 2007 · 79 citations

Engineering, Electrical Engineering, Microelectronics +16

WS<inf>2</inf> transistors on 300 mm wafers with BEOL compatibility

T. Schram, Quentin Smets, Benjamin Groven et al. · 2017 · 41 citations

Engineering, Materials Engineering, Materials Science +15

Effect of energetic ions on plasma damage of porous SiCOH low-k materials

E. Kunnen, Mikhaı̈l R. Baklanov, Alexis Franquet et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 39 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17