Patrick Herfurth

Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600$^{\circ} {\rm C}$) Electronics

Patrick Herfurth, David Maier, Lorenzo Lugani et al. · IEEE Electron Device Letters · 2013 · 37 citations · Full text

Semiconductors, Room Temperature, Electrical Engineering +13

GaN-on-insulator technology for high-temperature electronics beyond 400 °C

Patrick Herfurth, David Maier, Yakiv Men et al. · Semiconductor Science and Technology · 2013 · 21 citations · Full text

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Lorenzo Lugani, J.‐F. Carlin, M. A. Py et al. · Journal of Applied Physics · 2013 · 19 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Fabrication of a NCD microelectrode array for amperometric detection with micrometer spatial resolution

Elisabetta Colombo, Y. Men, Jochen Scharpf et al. · Diamond and Related Materials · 2011 · 15 citations · Full text

Amperometric Detection, Engineering, Microscopy +12

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure

Clemens Ostermaier, P. Lagger, M. Alomari et al. · Microelectronics Reliability · 2012 · 10 citations

Electrical Engineering, Engineering, Nanoelectronics +7