Concepedia

Author

Lorenzo Lugani

École Polytechnique Fédérale de Lausanne

Also Known As

L Lugani, L. LUGANI, L. Lugani, Lorenzo Lugani, Lugani, Lorenzo

27

Publications

469

Citations

14

H-Index

25

Concepts

All Affiliations

École Polytechnique Fédérale de LausanneETH ZurichIstituto NanoscienzeInstitute of Materials for Electronics and MagnetismScuola Normale Superiore
LL

About

Lorenzo Lugani is an author at École Polytechnique Fédérale de Lausanne specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

13

15

418

2

Applied Physics

13

15

418

3

Electrical Engineering

11

11

301

4

Materials Science

6

6

158

5

Physics

4

4

99

Lorenzo Lugani

×

17

Publications

451

Citations

14

H-Index

YearCitations

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Diego Marti, Stefano Tirelli, Valeria Teppati,

IEEE Electron Device Letters

2014

72

Faceting of InAs−InSb Heterostructured Nanowires

Lorenzo Lugani, Daniele Ercolani, Francesca Rossi,

Crystal Growth & Design

2010

50

Modeling of InAs–InSb nanowires grown by Au-assisted chemical beam epitaxy

Lorenzo Lugani, Daniele Ercolani, Lucia Sorba,

Nanotechnology

2012

38

AlInN-Based HEMTs for Large-Signal Operation at 40 GHz

Stefano Tirelli, Lorenzo Lugani, Diego Marti,

IEEE Transactions on Electron Devices

2013

37

Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600$^{\circ} {\rm C}$) Electronics

Patrick Herfurth, David Maier, Lorenzo Lugani,

IEEE Electron Device Letters

2013

37

Leakage mechanisms in InAlN based heterostructures

Lorenzo Lugani, M. A. Py, J.‐F. Carlin,

Journal of Applied Physics

2014

33

<i>n+</i>-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Lorenzo Lugani, Marco Malinverni, Stefano Tirelli,

Applied Physics Letters

2014

29

GaN-on-insulator technology for high-temperature electronics beyond 400 °C

Patrick Herfurth, David Maier, Yakiv Men,

Semiconductor Science and Technology

2013

21

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Lorenzo Lugani, J.‐F. Carlin, M. A. Py,

Journal of Applied Physics

2013

19

&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$W$ &lt;/tex-math&gt; &lt;/inline-formula&gt;-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Diego Marti, Lorenzo Lugani, J.‐F. Carlin,

IEEE Electron Device Letters

2016

18

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