Publication | Closed Access

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure

Electrical EngineeringEngineeringNanoelectronicsApplied PhysicsAluminum Gallium NitrideReliability InvestigationInaln/gan HemtsGan Power DeviceDual Gate StructureCategoryiii-v Semiconductor