Luca Morassi

Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

G. Verzellesi, Luca Morassi, Gaudenzio Meneghesso et al. · IEEE Electron Device Letters · 2014 · 113 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Errors Limiting Split-$CV$ Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs

Luca Morassi, G. Verzellesi, Han Zhao et al. · IEEE Transactions on Electron Devices · 2012 · 28 citations · Full text

Mechanism of high-k dielectric-induced breakdown of the interfacial SiO<inf>2</inf> layer

G. Bersuker, Dawei Heh, Chadwin D. Young et al. · 2010 · 27 citations · Full text

Engineering, Progressive Breakdown Phases, Integrated Circuits +16

InAs quantum-well MOSFET (L<inf>g</inf> = 100 nm) with record high g<inf>m</inf>, f<inf>T</inf> and f<inf>max</inf>

T.-W. Kim, Richard J. Hill, Chadwin D. Young et al. · 2012 · 13 citations

Quantum Science, Electrical Engineering, Record Performance +15

A Physical Model for Post-Breakdown Digital Gate Current Noise

Andrea Padovani, Luca Morassi, Nagarajan Raghavan et al. · IEEE Electron Device Letters · 2010 · 12 citations · Full text

Device Modeling, Semiconductor Technology, Electrical Engineering +14