Seiji Imai

Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

Tetsuo Hatakeyama, Takatoshi Watanabe, Mitsuhiro Kushibe et al. · Materials science forum · 2003 · 45 citations

Electrical Engineering, Engineering, Power Device +9

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Tetsuo Hatakeyama, Mitsuhiro Kushibe, Takatoshi Watanabe et al. · Materials science forum · 2003 · 31 citations

Electrical Engineering, Engineering, Power Device +6

Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

T. Ohguro, Naoharu Sugiyama, Seiji Imai et al. · IEEE Transactions on Electron Devices · 1998 · 24 citations

Electrical Engineering, Oxygen Concentration, Engineering +10

The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Junji Senzaki, Kenji Fukuda, Seiji Imai et al. · Applied Surface Science · 2000 · 14 citations

Materials Science, Electrical Engineering, Ion Implantation +8

Hot-Implantation of Phosphorus Ions into 4H-SiC

Seiji Imai, Setsuko Kobayashi, Takashi Shinohe et al. · Materials science forum · 2000 · 11 citations

Materials Engineering, Materials Science, Ion Implantation +4