Mitsuhiro Kushibe

Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

Sou Kagamihara, Hideharu Matsuura, Tetsuo Hatakeyama et al. · Journal of Applied Physics · 2004 · 81 citations

Sic Devices, Engineering, Power Electronic Systems +21

Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

Tetsuo Hatakeyama, Takatoshi Watanabe, Mitsuhiro Kushibe et al. · Materials science forum · 2003 · 45 citations

Electrical Engineering, Engineering, Power Device +9

Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratio

Mitsuhiro Kushibe, Kazuhiro Eguchi, M. Funamizu et al. · Applied Physics Letters · 1990 · 44 citations

Epilayer Surface, Engineering, Carbon-doped Gaas +16

High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition

Shigefusa F. Chichibu, Mitsuhiro Kushibe, Kazuhiro Eguchi et al. · Journal of Applied Physics · 1990 · 37 citations

Materials Engineering, Materials Science, Chemical Engineering +12

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Tetsuo Hatakeyama, Mitsuhiro Kushibe, Takatoshi Watanabe et al. · Materials science forum · 2003 · 31 citations

Electrical Engineering, Engineering, Power Device +6