Takatoshi Watanabe

Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers

Hideharu Matsuura, Masahiko Komeda, Sou Kagamihara et al. · Journal of Applied Physics · 2004 · 99 citations

Engineering, Semiconductor Device, Semiconductors +17

Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

Sou Kagamihara, Hideharu Matsuura, Tetsuo Hatakeyama et al. · Journal of Applied Physics · 2004 · 81 citations

Sic Devices, Engineering, Power Electronic Systems +21

Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

Tetsuo Hatakeyama, Takatoshi Watanabe, Mitsuhiro Kushibe et al. · Materials science forum · 2003 · 45 citations

Electrical Engineering, Engineering, Power Device +9

Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process

Tetsuo Hatakeyama, Mitsuhiro Kushibe, Takatoshi Watanabe et al. · Materials science forum · 2003 · 31 citations

Electrical Engineering, Engineering, Power Device +6

Superconducting Narrowband Filter for Receiver of Weather Radar

Tamio Kawaguchi, Noritsugu Shiokawa, Kohei Nakayama et al. · IEICE Transactions on Electronics · 2009 · 12 citations

Radar, Hairpin Microstrip Resonators, Engineering +9