Kazuhiro Eguchi

Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length

K. Okano, T. Izumida, H. Kawasaki et al. · 2006 · 76 citations

Electrical Engineering, Bulk Silicon Substrate, Engineering +9

Magnetic Resonance Wireless Power Transfer Over 10 m With Multiple Coils Immersed in Seawater

Ryosuke Hasaba, Katsuya Okamoto, Souichi Kawata et al. · IEEE Transactions on Microwave Theory and Techniques · 2019 · 66 citations

Electrical Engineering, Energy Harvesting, Engineering +12

High-Performance FinFET with Dopant-Segregated Schottky Source/Drain

A. Kaneko, A. Yagishita, K. Yahashi et al. · 2006 · 53 citations

Low-power Electronics, Propagation Delay Time, Electrical Engineering +10

Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium

Tomonori Aoyama, Kazuhiro Eguchi · Japanese Journal of Applied Physics · 1999 · 49 citations

Engineering, Electrode-electrolyte Interface, Residual Impurities +17

Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm Node and Beyond

Hikaru Kawasaki, K. Okano, A. Kaneko et al. · 2006 · 44 citations

Electrical Engineering, Engineering, Vlsi Design +12