Kazuhiro Eguchi - Concepedia

Author

Kazuhiro Eguchi

Toshiba (Japan)ORCID

Also Known As

K. Eguchi, KAZUHIRO EGUCHI, Kazuhiro EGUCHI, Kazuhiro Eguchi, M. Takayanagi

116

Publications

970

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)University of Tsukuba Panasonic (Japan)Fujitsu (Japan)National Institute of Advanced Industrial Science and Technology

About

Kazuhiro Eguchi is an author at Toshiba (Japan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	25	689
2	Applied Physics	13	16	346
3	Chemistry	3	3	74
4	Chemical Engineering	2	2	86
5	Natural Sciences	1	1	10

Kazuhiro Eguchi

Publications

753

Citations

H-Index

Page 1

	Year	Citations
Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length K. Okano, T. Izumida, H. Kawasaki, Electrical EngineeringBulk Silicon SubstrateEngineeringWafer Scale ProcessingAdvanced Packaging (Semiconductors)	2006	76
Magnetic Resonance Wireless Power Transfer Over 10 m With Multiple Coils Immersed in Seawater Ryosuke Hasaba, Katsuya Okamoto, Souichi Kawata, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringEnergy HarvestingEngineeringWireless Power TransmissionOcean Engineering	2019	66
High-Performance FinFET with Dopant-Segregated Schottky Source/Drain A. Kaneko, A. Yagishita, K. Yahashi, Low-power ElectronicsPropagation Delay TimeElectrical EngineeringEngineeringNanoelectronics	2006	53
Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium Tomonori Aoyama, Kazuhiro Eguchi Japanese Journal of Applied Physics EngineeringElectrode-electrolyte InterfaceResidual ImpuritiesChemistryChemical Deposition	1999	49
Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm Node and Beyond Hikaru Kawasaki, K. Okano, A. Kaneko, Electrical EngineeringEngineeringVlsi DesignStatic Noise MarginHp32 Nm Node	2006	44
Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratio Mitsuhiro Kushibe, Kazuhiro Eguchi, M. Funamizu, Applied Physics Letters Epilayer SurfaceEngineeringCarbon-doped GaasSemiconductorsNanoelectronics	1990	44
Sidewall transfer process and selective gate sidewall spacer formation technology for sub-15nm finfet with elevated source/drain extension A. Kaneko, A. Yagishita, K. Yahashi, Electrical EngineeringEngineeringSidewall Transfer ProcessSpacer FormationNanoelectronics	2006	44
High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition Shigefusa F. Chichibu, Mitsuhiro Kushibe, Kazuhiro Eguchi, Journal of Applied Physics Materials EngineeringMaterials ScienceChemical EngineeringIi-vi SemiconductorEngineering	1990	37
Helicity-Selective Photoreaction of Single-Walled Carbon Nanotubes with Organosulfur Compounds in the Presence of Oxygen Yutaka Maeda, Junki Higo, Yuri Amagai, Journal of the American Chemical Society	2013	37
Impact of Hf concentration on performance and reliability for HfSiON-CMOSFET T. Watanabe, M. Takayanagi, Kazunobu Kojima, Electrical EngineeringGate SpacersEngineeringNanoelectronicsOptimized Hfsion	2005	33

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