Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium

Abstract

Ruthenium (Ru) films were deposited by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl)ruthenium (Ru(C 2 H 5 C 5 H 4 ) 2 ). The crystalline structure, resistivity and residual impurities in the Ru films were investigated. The Ru films were polycrystalline and had a columnar structure; they showed a low resistivity of about 20 µΩ cm, which is sufficiently low for them to be used as capacitor electrodes.