The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature

Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

Reinhold Schomer, Peter Friedrichs, Dethard Peters et al. · IEEE Electron Device Letters · 1999 · 227 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide

M. A. Capano, Sang‐Wan Ryu, M. R. Melloch et al. · Journal of Electronic Materials · 1998 · 106 citations

Materials Science, Materials Engineering, Ion Implantation +9

Nitrogen Ion Implantation into α-SiC Epitaxial Layers

Tsunenobu Kimoto, Naoya Inoue · physica status solidi (a) · 1997 · 95 citations

Materials Engineering, Materials Science, Electrical Engineering +12

Ion-implantation in bulk semi-insulating 4H–SiC

Mulpuri V. Rao, Jesse B. Tucker, M. C. Ridgway et al. · Journal of Applied Physics · 1999 · 56 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Characterization of phosphorus implantation in 4H-SiC

V. Khemka, R. N. Patel, N. Ramungul et al. · Journal of Electronic Materials · 1999 · 52 citations

Materials Engineering, Materials Science, Engineering +4