H. Tanoue - Concepedia

Author

H. Tanoue

National Institute of Advanced Industrial Science and Technology

Also Known As

H TANOUE, H Tanoue, H. TANOUE, H. Tanoue, Hisao TANOUE, Hisao Tanoue, Hisao Tanoue Hisao Tanoue

185

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

National Institute of Advanced Industrial Science and Technology Electrotechnical Institute Yamato University The University of Osaka Osaka Research Institute of Industrial Science and Technology

About

H. Tanoue is an author at National Institute of Advanced Industrial Science and Technology specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	55	1.5K
2	Applied Physics	24	52	1.4K
3	Natural Sciences	4	4	123
4	Education	1	1	46
5	Medicine	1	1	61

H. Tanoue

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Demonstration, Analysis, and Device Design Considerations for Independent DG MOSFETs Meishoku Masahara, Yongxun Liu, Kunihiro Sakamoto, IEEE Transactions on Electron Devices Device ModelingDevice Design GuidelinesElectrical EngineeringEngineeringV/sub Th/ Controllability	2005	130
Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantation Hiroshi Kawazoe, Naoyuki Ueda, H. Un’no, Journal of Applied Physics Materials ScienceSolid-state IonicMaterial AnalysisEngineeringLi+ Implantation	1994	90
Studies on aluminum-doped ZnO films for transparent electrode and antireflection coating of β-FeSi2 optoelectronic devices Teruhisa Ootsuka, Zheng-Xin Liu, Masato Osamura, Thin Solid Films Materials ScienceElectrical EngineeringOptical MaterialsEngineeringOxide Electronics	2005	63
Maskless etching of a nanometer structure by focused ion beams Masanori Komuro, Hiroshi Hiroshima, H. Tanoue, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena EngineeringElectron-beam LithographyMicroscopyIon Beam InstrumentationIntegrated Circuits	1983	61
Uniaxial magnetic anisotropy of submicron MnAs ferromagnets in GaAs semiconductors Koji Ando, Ayano Chiba, H. Tanoue Applied Physics Letters Magnetic PropertiesEngineeringHexagonal Mnas CrystallitesMn+ Ion ImplantationMagnetic Materials	1998	56
Ultrathin Channel Vertical DG MOSFET Fabricated by Using Ion-Bombardment-Retarded Etching Meishoku Masahara, Yongxun Liu, S. Hosokawa, IEEE Transactions on Electron Devices Materials EngineeringElectrical EngineeringIon ImplantationEngineeringUltrathin Channel	2004	55
Control of emission currents from silicon field emitter arrays using a built-in MOSFET S. Kanemaru, Takayuki Hirano, H. Tanoue, Applied Surface Science Electrical EngineeringEmission CurrentsEngineeringNanoelectronicsElectronic Engineering	1997	49
Measurement of virtual crossover in liquid gallium ion source Masanori Komuro, Toshihiko Kanayama, Hiroshi Hiroshima, Applied Physics Letters Virtual CrossoverOptical MaterialsEngineeringMeasurementMicroscopy	1983	46
Fluorescence-Detected X-Ray Absorption Spectroscopy Applied to Structural Characterization of Very Thin Films; Ion-Beam-Induced Modification of Thin Ni Layers on Si(100) H. Ōyanagi, Tadashi Matsushita, H. Tanoue, Japanese Journal of Applied Physics Structural CharacterizationX-ray SpectroscopyEngineeringVacuum DeviceSynchrotron Radiation Source	1985	44
Spatial Distribution of Energy Deposited by Energetic Heavy Ions in Semiconductors T. Tsurushima, H. Tanoue Journal of the Physical Society of Japan EngineeringNuclear PhysicsNew General PrincipleIon ProcessSemiconductors	1971	41

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