Teruhisa Ootsuka

Studies on aluminum-doped ZnO films for transparent electrode and antireflection coating of β-FeSi2 optoelectronic devices

Teruhisa Ootsuka, Zheng-Xin Liu, Masato Osamura et al. · Thin Solid Films · 2005 · 63 citations

Materials Science, Electrical Engineering, Optical Materials +12

Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers

Zheng-Xin Liu, Yasuhito Suzuki, Masato Osamura et al. · Journal of Applied Physics · 2004 · 38 citations

Materials Science, β-Fesi2 Films, Engineering +12

Important research targets to be explored for β-FeSi2 device making

Y. Makita, Yasuhiko Nakayama, Yasuhiro Fukuzawa et al. · Thin Solid Films · 2004 · 30 citations

Materials Engineering, Materials Science, Electrical Engineering +7

Doping of β-FeSi2 films with boron and arsenic by sputtering and its application for optoelectronic devices

Zheng-Xin Liu, Masato Osamura, Teruhisa Ootsuka et al. · Optical Materials · 2004 · 28 citations

Materials Engineering, Materials Science, Semiconductor Technology +9

Photoresponse properties of Al∕n-β-FeSi2 Schottky diodes using β-FeSi2 single crystals

Teruhisa Ootsuka, Y. Fudamoto, Masato Osamura et al. · Applied Physics Letters · 2007 · 28 citations · Full text

Materials Science, Semiconductors, Photoresponse Properties +14