Y. Makita - Concepedia

Author

Y. Makita

Tokyo University of Science

Also Known As

Makita, Y., Y Makita, Y. MAKITA, Y. Makita, Yuichi Makita, Yunosuke Makita

Publications

674

Citations

H-Index

Concepts

All Affiliations

Tokyo University of Science National Institute of Advanced Industrial Science and Technology Meiji University

About

Y. Makita is an author at Tokyo University of Science specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	13	13	542
2	Engineering	12	12	528
3	Electrical Engineering	4	4	287
4	Natural Sciences	1	1	23
5	Chemistry	1	1	13

Y. Makita

Publications

542

Citations

H-Index

Page 1

	Year	Citations
Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy Jiang De-Sheng, Y. Makita, K. Ploog, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesElectrical Properties	1982	210
Heteroepitaxy and characterization of CuInSe2 on GaAs(001) Shigeru Niki, Y. Makita, A. Yamada, Journal of Crystal Growth EngineeringApplied PhysicsQuantum MaterialsMolecular Beam EpitaxyCompound Semiconductor	1995	58
Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxy Shigeru Niki, Hajime Shibata, Paul Fons, Applied Physics Letters SemiconductorsIi-vi SemiconductorElectronic DevicesEngineeringPhotoluminescence	1995	51
Excimer laser sputtering deposition of TiO2 optical coating for solar cells H.-A. Durand, J.-H. Brimaud, Olof C. Hellman, Applied Surface Science Materials ScienceOptical MaterialsTio2 Optical CoatingEngineeringApplied Physics	1995	35
Important research targets to be explored for β-FeSi2 device making Y. Makita, Yasuhiko Nakayama, Yasuhiro Fukuzawa, Thin Solid Films Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2004	30
Photoluminescence study of the annealing behavior of transmuted impurities in neutron-transmutation-doped semi-insulating GaAs Masataka Satoh, K. Kuriyama, Y. Makita Journal of Applied Physics Wide-bandgap SemiconductorEngineeringNeutron-transmutation-doped GaasTransmuted ImpuritiesNeutron-transmutation-doped Semi-insulating Gaas	1989	28
Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis Naoto Kobayashi, H. Katsumata, Honglie Shen, Thin Solid Films Materials ScienceOptical MaterialsEngineeringApplied PhysicsSemiconductor Device Fabrication	1995	28
Small polaron of β-FeSi2 obtained from optical measurements Hirofumi Kakemoto, Y. Makita, Yoshihiro Kino, Thin Solid Films Optical MaterialsEngineeringPhysicsOptical PropertiesSpectroscopy	2001	23
Molecular beam epitaxy of GaAs using a mass-separated, low-energy As+ ion beam Saburo Shimizu, O. Tsukakoshi, S. Komiya, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena SemiconductorsMaterials ScienceElectrical EngineeringEpitaxial GrowthEngineering	1985	19
Characterization of Cat-CVD grown Si–C and Si–C–O dielectric films for ULSI applications K. Takatsuji, Masaki Kawakami, Y. Makita, Thin Solid Films Materials ScienceSemiconductor TechnologyEngineeringSi–c–o Dielectric FilmsApplied Physics	2003	19

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