E. Ganin

High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern et al. · IEEE Electron Device Letters · 1988 · 168 citations

Device Modeling, Electrical Engineering, Gate Length +14

Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's

G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern et al. · IEEE Electron Device Letters · 1987 · 135 citations

Low-power Electronics, Device Modeling, Electrical Engineering +15

Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization

B.S. Meyerson, E. Ganin, D. A. Smith et al. · Journal of The Electrochemical Society · 1986 · 103 citations · Full text

Engineering, Material Epitaxial, Integrated Circuits +16

Graded-SiGe-base, poly-emitter heterojunction bipolar transistors

G.L. Patton, D.L. Harame, J.M.C. Stork et al. · IEEE Electron Device Letters · 1989 · 88 citations

Semiconductors, Low Bias, Electrical Engineering +9

Shock induced hardness in α-Iron

E. Ganin, Y. Komem, A. Rosen · Materials Science and Engineering · 1978 · 54 citations

Materials Science, Engineering, Shock Compression +5