E. Sangiorgi

Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

David Esseni, A. Abramo, L. Selmi et al. · IEEE Transactions on Electron Devices · 2003 · 171 citations · Full text

Device Modeling, Electrical Engineering, So Phonon +11

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Andrea Natale Tallarico, Steve Stoffels, Paolo Magnone et al. · IEEE Electron Device Letters · 2016 · 163 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Understanding Quasi-Ballistic Transport in Nano-MOSFETs: Part I—Scattering in the Channel and in the Drain

Pierpaolo Palestri, David Esseni, S. Eminente et al. · IEEE Transactions on Electron Devices · 2005 · 153 citations · Full text

Engineering, Scattering Models, Charge Transport +16

Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

C. Fiegna, Yang Yang, E. Sangiorgi et al. · IEEE Transactions on Electron Devices · 2008 · 153 citations

Engineering, Ultrathin-body Soi Mosfets, Silicon On Insulator +17

Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

David Esseni, M. Mastrapasqua, G. K. Celler et al. · IEEE Transactions on Electron Devices · 2001 · 136 citations · Full text

Electrical Engineering, Engineering, Physics +14