S. Eminente

Understanding Quasi-Ballistic Transport in Nano-MOSFETs: Part I—Scattering in the Channel and in the Drain

Pierpaolo Palestri, David Esseni, S. Eminente et al. · IEEE Transactions on Electron Devices · 2005 · 153 citations · Full text

Engineering, Scattering Models, Charge Transport +16

Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

S. Eminente, S. Cristoloveanu, R. Clerc et al. · Solid-State Electronics · 2007 · 136 citations

Electrical Engineering, Engineering, Applied Physics +4

An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

Pierpaolo Palestri, S. Eminente, David Esseni et al. · Solid-State Electronics · 2005 · 64 citations · Full text

Device Modeling, Electrical Engineering, Engineering +9

Understanding Quasi-Ballistic Transport in Nano-MOSFETs: Part II—Technology Scaling Along the ITRS

S. Eminente, David Esseni, Pierpaolo Palestri et al. · IEEE Transactions on Electron Devices · 2005 · 60 citations · Full text

Engineering, Part Ii—technology Scaling, International Technology Roadmap +17

Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation

S. Eminente, Marco Alessandrini, C. Fiegna · Solid-State Electronics · 2003 · 36 citations

Electrical Engineering, Engineering, Rf Semiconductor +8