Overview of atomic layer etching in the semiconductor industry

Keren J. Kanarik, Thorsten Lill, Eric A. Hudson, +5

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringLayer DepositionIntegrated CircuitsSilicon On InsulatorAtomic Layer +15

Predicting synergy in atomic layer etching

Keren J. Kanarik, Samantha Tan, Wenbing Yang, +12

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceSurface CharacterizationEngineeringTunneling MicroscopyPhysics +11

Future of plasma etching for microelectronics: Challenges and opportunities

G. S. Oehrlein, Stephan M. Brandstadter, Robert L. Bruce, +32

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Materials ScienceElectrical EngineeringDigital TwinsEngineeringPlasma Electronics +12

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

Camille Petit‐Etienne, Maxime Darnon, Laurent Vallier, +6

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

EngineeringPlasma OxidationSilicon On InsulatorPlasma ProcessingSemiconductor Device +15

Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

E. Pargon, K. Menguelti, M. Martin, +6

Journal of Applied Physics

Ultraviolet LightOptical MaterialsEngineeringPlasma Cure TreatmentsPlasma Physics +21

Directional etch of magnetic and noble metals. II. Organic chemical vapor etch

Jack Kun-Chieh Chen, Nicholas D. Altieri, Taeseung Kim, +4

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Noble MetalsEngineeringOxidation ResistanceMagnetic ResonanceChemistry +17

Highly Selective Directional Atomic Layer Etching of Silicon

Samantha Tan, Wenbing Yang, Keren J. Kanarik, +4

ECS Journal of Solid State Science and Technology

Materials ScienceEngineeringPhysicsMicrofabricationNanoelectronics +11

The Cutting Edge of Plasma Etching

Thorsten Lill, O. Joubert

Science

Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors

E. Pargon, M. Martin, J. Thiault, +3

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

EngineeringMicroscopyLinewidth Roughness TransferPolysilicon Transistor GatesIntegrated Circuits +19

Dry etching in the presence of physisorption of neutrals at lower temperatures

Thorsten Lill, Ivan L. Berry, Meihua Shen, +5

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

EngineeringVacuum DeviceChemistryPlasma ProcessingLower Temperatures +15