M. Moosa

Understanding SRAM High-Temperature-Operating-Life NBTI: Statistics and Permanent vs Recoverable Damage

A. Haggag, Gary A. Anderson, S. Parihar et al. · 2007 · 60 citations

Engineering, Vlsi Design, Defect Tolerance +17

Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology

H.‐H. Tseng, Y. Jeon, P. Abramowitz et al. · IEEE Electron Device Letters · 2002 · 41 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Dual-metal gate CMOS with HfO/sub 2/ gate dielectric

S. Samavedam, L.B. La, James A. Smith et al. · 2003 · 37 citations

Dual-metal Integration, Electrical Engineering, Engineering +9

Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics

L. Mathew, Yaping Du, S. Kalpat et al. · 2005 · 33 citations

Migfet Devices, Electrical Engineering, Independent Gates +13

BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments

S. Kalpat, Hsing‐Huang Tseng, M. Ramón et al. · IEEE Transactions on Device and Materials Reliability · 2005 · 28 citations

Engineering, Semiconductor Device, Nanoelectronics +16