Hsing‐Huang Tseng

Si tunnel transistors with a novel silicided source and 46mV/dec swing

Kanghoon Jeon, Wei-Yip Loh, Pratik Patel et al. · 2010 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing

Patrick Lysaght, Joel Barnett, G. Bersuker et al. · Journal of Applied Physics · 2007 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +17

Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap

Ji‐Woon Yang, P. Zeitzoff, Hsing‐Huang Tseng · IEEE Transactions on Electron Devices · 2007 · 63 citations

Engineering, Computer Engineering, Electrical Engineering +17

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

Jungwoo Oh, Prashant Majhi, Hideok Lee et al. · IEEE Electron Device Letters · 2007 · 56 citations

Engineering, Electrical Engineering, Materials Science +17

Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- $k$ Gate Stacks

G. Bersuker, Chang Seo Park, Huang-Chun Wen et al. · IEEE Transactions on Electron Devices · 2010 · 42 citations

Engineering, Electrical Engineering, Materials Science +17