P. Zeitzoff

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

Baolei Cheng, Min Cao, A. Inani et al. · IEEE Transactions on Electron Devices · 1999 · 299 citations

Engineering, Electrical Engineering, Materials Science +17

Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures

Ali Razavieh, P. Zeitzoff, Edward J. Nowak · IEEE Transactions on Nanotechnology · 2019 · 280 citations

Engineering, Electrical Engineering, Microelectronics +16

An improved electron and hole mobility model for general purpose device simulation

M. Darwish, J.L. Lentz, M.R. Pinto et al. · IEEE Transactions on Electron Devices · 1997 · 181 citations

Engineering, Electrical Engineering, Materials Science +17

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

Dielectrics for future transistors

G. Bersuker, P. Zeitzoff, George Brown et al. · Materials Today · 2004 · 93 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17