P. Zeitzoff

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

Baolei Cheng, Min Cao, A. Inani et al. · IEEE Transactions on Electron Devices · 1999 · 297 citations

Engineering, Semiconductor Device, Sub-100 Nm Mosfets +16

Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures

Ali Razavieh, P. Zeitzoff, Edward J. Nowak · IEEE Transactions on Nanotechnology · 2019 · 260 citations

Cmos Scaling, Engineering, Vlsi Design +18

An improved electron and hole mobility model for general purpose device simulation

M. Darwish, J.L. Lentz, M.R. Pinto et al. · IEEE Transactions on Electron Devices · 1997 · 178 citations

Engineering, Hole Mobility Model, Semiconductor Device +19

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 139 citations

Engineering, Electron-beam Lithography, Finfet Technology +18

Dielectrics for future transistors

G. Bersuker, P. Zeitzoff, George Brown et al. · Materials Today · 2004 · 93 citations · Full text

Future Transistors, Electrical Engineering, Physical Design (Electronics) +15