M. Ramón

Statistics

Publications

Citations

489

H-Index

Active since

2003

Affiliations

The University of Texas at Austin(Current)

Motorola (United States)

Taiwan Semiconductor Manufacturing Company (Taiwan)

M. Ramón is an author at The University of Texas at Austin specializing in materials science, semiconductor devices, and semiconductor device materials.

ORCID

Publications per year

2003–2023

Publications

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan et al. · Journal of The Electrochemical Society · 2004 · 167 citations

Natural Sciences, Materials Engineering, Materials Science +17

Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments

Dina H. Triyoso, R. I. Hegde, Jennifer E. Grant et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 69 citations

Engineering, Materials Engineering, Materials Science +17

HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium

J. K. Schaeffer, N. V. Edwards, Rui Liu et al. · Journal of The Electrochemical Society · 2003 · 60 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Physical and Electrical Characteristics of HfO[sub 2] Gate Dielectrics Deposited by ALD and MOCVD

Dina H. Triyoso, M. Ramón, R. I. Hegde et al. · Journal of The Electrochemical Society · 2005 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric

Davood Shahrjerdi, T. Akyol, M. Ramón et al. · Applied Physics Letters · 2008 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

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