Jack Clayton

A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff,on </sub>and Fast Switching

Mrinal K. Das, Q. Jon Zhang, Robert Callanan et al. · Materials science forum · 2008 · 55 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Development of 15 kV 4H-SiC IGBTs

Sei‐Hyung Ryu, Lin Cheng, Sarit Dhar et al. · Materials science forum · 2012 · 53 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High performance, ultra high voltage 4H-SiC IGBTs

Sei‐Hyung Ryu, Craig Capell, Lin Cheng et al. · 2012 · 49 citations

Engineering, Electrical Engineering, Materials Science +15

Ultra high voltage IGBTs in 4H-SiC

Sei‐Hyung Ryu, Craig Capell, Charlotte Jonas et al. · 2013 · 44 citations

Engineering, Electrical Engineering, Materials Science +14

Ultra high voltage MOS controlled 4H-SiC power switching devices

Sei‐Hyung Ryu, Craig Capell, Edward Van Brunt et al. · Semiconductor Science and Technology · 2015 · 43 citations

Engineering, Electrical Engineering, Power Electronics +16