Y. Douvry

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Clemens Ostermaier, G. Pozzovivo, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2009 · 64 citations · Full text

Semiconductors, Hemt Access Region, Electrical Engineering +15

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

Marie Lesecq, Virginie Hoel, A. Lecavelier Des Etangs-Levallois et al. · IEEE Electron Device Letters · 2010 · 52 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Clemens Ostermaier, G. Pozzovivo, B. Basnar et al. · IEEE Transactions on Electron Devices · 2010 · 34 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Ana Curutchet, C. Sury, Virginie Hoel et al. · Microelectronics Reliability · 2009 · 22 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +8

Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

N. Defrance, F. Lecourt, Y. Douvry et al. · IEEE Transactions on Electron Devices · 2013 · 19 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14