S. Kanakasabapathy

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 988 citations

Engineering, Electrical Engineering, Microelectronics +15

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 144 citations

Engineering, Electrical Engineering, Materials Science +15

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

Kangguo Cheng, A. Khakifirooz, P. Kulkarni et al. · 2009 · 104 citations

Engineering, Computer Engineering, Electrical Engineering +17

High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Qianlong Liu, M. Vinet, J. Gimbert et al. · 2013 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +10

Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

Hikaru Kawasaki, V. Basker, T. Yamashita et al. · 2009 · 94 citations

Engineering, Computer Engineering, Electrical Engineering +17