F. Schanovsky

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Tibor Grasser, Ben Kaczer, Wolfgang Goes et al. · IEEE Transactions on Electron Devices · 2011 · 476 citations

Engineering, Electrical Engineering, Physics +15

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Tibor Grasser, H. Reisinger, P.-J. Wagner et al. · 2010 · 285 citations · Full text

Engineering, Electrical Engineering, Physics +17

Recent advances in understanding the bias temperature instability

Tibor Grasser, B. Kaczer, Wolfgang Goes et al. · 2010 · 105 citations

Engineering, Physics, Fault Tolerance +7

On the microscopic structure of hole traps in pMOSFETs

Tibor Grasser, Wolfgang Goes, Yannick Wimmer et al. · 2014 · 98 citations

Engineering, Electrical Engineering, Physics +17

A Physical Model for the Hysteresis in MoS₂ Transistors

Theresia Knobloch, G. Rzepa, Yu. Yu. Illarionov et al. · IEEE Journal of the Electron Devices Society · 2018 · 77 citations · Full text

Engineering, Electrical Engineering, Materials Science +17