Concepedia

The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

M. Lazar, Farah Laariedh, Pierre Crémillieu, Dominique Planson, Jean‐Louis Leclercq

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2015 · 16 citations · 7 references

DOI

Concepts

References

7

Theory of Semiconductor Superjunction Devices

Tatsuhiko Fujihira · Japanese Journal of Applied Physics · 1997 · 541 citations

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Silicon carbide and diamond for high temperature device applications

M. Willander, M. Friesel, Q. Wahab et al. · Journal of Materials Science Materials in Electronics · 2005 · 286 citations

, , +14

Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

Hiroyuki Matsunami · Japanese Journal of Applied Physics · 2004 · 198 citations · Full text

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Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

J. Wong‐Leung, Martin S. Janson, B. G. Svensson · Journal of Applied Physics · 2003 · 52 citations · Full text

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The role of nickel and titanium in the formation of ohmic contacts on p-type 4H–SiC

Farah Laariedh, M. Lazar, Pierre Crémillieu et al. · Semiconductor Science and Technology · 2013 · 36 citations

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