M. Lazar

Deep SiC etching with RIE

M. Lazar, Heu Vang, Pierre Brosselard et al. · Superlattices and Microstructures · 2006 · 46 citations

Engineering, Materials Engineering, Materials Science +7

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

M. Lazar, Christophe Raynaud, Dominique Planson et al. · Journal of Applied Physics · 2003 · 23 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Parametric investigation of the formation of epitaxial Ti3SiC2 on 4H-SiC from Al-Ti annealing

Tony Abi-Tannous, Maher Soueidan, Gabriel Ferro et al. · Applied Surface Science · 2015 · 20 citations

Engineering, Materials Engineering, Materials Science +14

The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

M. Lazar, Farah Laariedh, Pierre Crémillieu et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2015 · 16 citations

Engineering, Electrical Engineering, Materials Science +16

3C–SiC Heteroepitaxial Growth by Vapor–Liquid–Solid Mechanism on Patterned 4H–SiC Substrate Using Si–Ge Melt

Jean Lorenzzi, M. Lazar, D. Tournier et al. · Crystal Growth & Design · 2011 · 12 citations

Engineering, Materials Engineering, Materials Science +17