Dominique Planson

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

M. Lazar, Christophe Raynaud, Dominique Planson et al. · Journal of Applied Physics · 2003 · 23 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High temperature characterization of SiC-JFET and modelling

R. Mousa, Dominique Planson, Hervé Morel et al. · 2007 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

Nicolas Thierry‐Jebali, Jawad Ul‐Hassan, M. Lazar et al. · Applied Physics Letters · 2012 · 17 citations

Engineering, Materials Engineering, Materials Science +16

SiC power semiconductor devices for new applications in power electronics

Dominique Planson, Dominique Tournier, Pascal Bevilacqua et al. · 2008 · 12 citations

Engineering, Electrical Engineering, Materials Science +17

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Dominique Planson, Pierre Brosselard, Karine Isoird et al. · 2014 · 10 citations

Engineering, Electrical Engineering, Materials Science +17