Pierre Brosselard

Extreme dielectric strength in boron doped homoepitaxial diamond

Pierre‐Nicolas Volpe, Pierre Muret, Julien Pernot et al. · Applied Physics Letters · 2010 · 150 citations · Full text

Materials Science, Extreme Dielectric Strength, Electrical Engineering +13

Gate Oxide Degradation of SiC MOSFET in Switching Conditions

Rémy Ouaida, Maxime Berthou, Javier León et al. · IEEE Electron Device Letters · 2014 · 131 citations

Reliability, Sic Mosfet, Electrical Engineering +15

Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

Amador Pérez‐Tomás, Pierre Brosselard, Philippe Godignon et al. · Journal of Applied Physics · 2006 · 128 citations

High Density, Semiconductor Technology, Electrical Engineering +15

SiC Schottky Diodes for Harsh Environment Space Applications

Philippe Godignon, X. Jordà, X. Perpiñà et al. · IEEE Transactions on Industrial Electronics · 2010 · 102 citations

Engineering, Photovoltaics, Semiconductor Device +16

High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer

Pierre‐Nicolas Volpe, Pierre Muret, Julien Pernot et al. · physica status solidi (a) · 2010 · 61 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14