Pierre Brosselard

Extreme dielectric strength in boron doped homoepitaxial diamond

Pierre‐Nicolas Volpe, Pierre Muret, Julien Pernot et al. · Applied Physics Letters · 2010 · 150 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Gate Oxide Degradation of SiC MOSFET in Switching Conditions

Rémy Ouaida, Maxime Berthou, Javier León et al. · IEEE Electron Device Letters · 2014 · 133 citations

Engineering, Electrical Engineering, Materials Engineering +17

Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors

Amador Pérez‐Tomás, Pierre Brosselard, Philippe Godignon et al. · Journal of Applied Physics · 2006 · 129 citations

Engineering, Electrical Engineering, Materials Science +17

SiC Schottky Diodes for Harsh Environment Space Applications

Philippe Godignon, X. Jordà, X. Perpiñà et al. · IEEE Transactions on Industrial Electronics · 2010 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer

Pierre‐Nicolas Volpe, Pierre Muret, Julien Pernot et al. · physica status solidi (a) · 2010 · 63 citations

Engineering, Materials Engineering, Materials Science +17