Maxime Berthou

Gate Oxide Degradation of SiC MOSFET in Switching Conditions

Rémy Ouaida, Maxime Berthou, Javier León et al. · IEEE Electron Device Letters · 2014 · 131 citations

Reliability, Sic Mosfet, Electrical Engineering +15

Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage

Maxime Berthou, P. Retailleau, H. Frémont et al. · Microelectronics Reliability · 2009 · 60 citations

Materials Science, Materials Engineering, Engineering +12

Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs

Maxime Berthou, Philippe Godignon, José del R. Millán · IEEE Transactions on Power Electronics · 2013 · 48 citations

Integrated Temperature Sensor, Electrical Engineering, Semiconductor Device +15

ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation

J. Vobecký, P. Hazdra, Vít Záhlava et al. · Solid-State Electronics · 2014 · 36 citations

Device Modeling, Electrical Engineering, Engineering +5

High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide

Victor Soler, Maria Cabello, Maxime Berthou et al. · IEEE Transactions on Industrial Electronics · 2017 · 25 citations · Full text

Semiconductor Technology, Boron Oxide Treatment, Electrical Engineering +12