Vít Záhlava

Point defects in 4H–SiC epilayers introduced by neutron irradiation

P. Hazdra, Vít Záhlava, J. Vobecký · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2014 · 42 citations

Nuclear Ceramic, Point Defects, Engineering +3

ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation

J. Vobecký, P. Hazdra, Vít Záhlava et al. · Solid-State Electronics · 2014 · 36 citations

Device Modeling, Electrical Engineering, Engineering +5

Open circuit voltage decay lifetime of ion irradiated devices

J. Vobecký, P. Hazdra, Vít Záhlava · Microelectronics Journal · 1999 · 26 citations

Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation

P. Hazdra, Vít Záhlava, J. Vobecký et al. · Materials science forum · 2013 · 18 citations

Semiconductor Technology, Nuclear Ceramic, Electrical Engineering +15

Effect of Neutron Irradiation on High Voltage <newline/>4H-SiC Vertical JFET Characteristics: <newline/>Characterization and Modeling

Stanislav Popelka, P. Hazdra, Rupendra Kumar Sharma et al. · IEEE Transactions on Nuclear Science · 2014 · 16 citations

Electrical Engineering, Engineering, Nuclear Physics +13