2008 · 12 citations · 8 references
EngineeringElectrical EngineeringMaterials SciencePower ElectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsHigh-temperature ElectronicsPhysical PropertiesPower Electronics DevicesSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSilicon Carbide Power ElectronicsWide Bandgap Semiconductor Applications
This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.
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Ionization rates and critical fields in 4H silicon carbide
Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Applied Physics Letters · 1997 · 398 citations
12-19 kV 4H-SiC pin diodes with low power loss
Y. Sugawara, Daisuke Takayama, K. Asano et al. · 2002 · 110 citations
Ionization Rates and Critical Fields in 4H SiC Junction Devices
Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Materials science forum · 1998 · 32 citations · Full text