Nicolas Thierry‐Jebali

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

Thibaut Chailloux, Cyril Calvez, Nicolas Thierry‐Jebali et al. · Materials science forum · 2014 · 25 citations · Full text

Engineering, Sic Power Devices, Power Electronics +18

Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers

Nicolas Thierry‐Jebali, Chihiro Kawahara, Tetsuya Miyazawa et al. · AIP Advances · 2015 · 19 citations · Full text

Materials Science, Uv Photoluminescence, Engineering +9

Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

Nicolas Thierry‐Jebali, Jawad Ul‐Hassan, M. Lazar et al. · Applied Physics Letters · 2012 · 17 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +14

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

Nicolas Thierry‐Jebali, Arthur Vo-Ha, D. Carole et al. · Applied Physics Letters · 2013 · 12 citations · Full text

Engineering, Vapor-liquid-solid Transport, Optoelectronic Devices +18