Scalable High Voltage CMOS technology for Smart Power and sensor applications

The Universality of NBTI Relaxation and its Implications for Modeling and Characterization

Tibor Grasser, Wolfgang Gös, Viktor Sverdlov et al. · 2007 · 177 citations

Natural Sciences, Materials Science, Physics +12

LDMOS implementation in a 0.35 μm BCD technology (BCD6)

Alessandro Moscatelli, A. Merlini, Giuseppe Croce et al. · 2002 · 60 citations

Engineering, Electrical Engineering, Microelectronics +16

Dielectric resurf: breakdown voltage control by STI layout in standard CMOS

Jan Šonský, A. Heringa · 2006 · 39 citations

Engineering, Electrical Engineering, Microelectronics +15

I3T80: a 0.35 μm based system-on-chip technology for 42 V battery automotive applications

P. Moens, D. Bolognesi, L. Delobel et al. · 2003 · 35 citations

Engineering, Automotive Engineering, Electrical Engineering +10

Novel FRESURF LDMOSFET Devices with Improved BV<tex>$_rm dss$</tex>–R<tex>$_rm dson$</tex>

V. Khemka, V. Parthasarathy, Ronghua Zhu et al. · IEEE Electron Device Letters · 2004 · 10 citations

Engineering, Electrical Engineering, Electronic Materials +11