IEEE Electron Device Letters · 2004 · 10 citations · 6 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsBreakdown VoltageBreakdown Voltage OptimizationBuried Channel DevicesHigh-voltage BreakdownPower Mosfets
In this letter, we propose and demonstrate a novel device based on a floating reduced surface field (FRESURF) concept which allows the realization of significantly higher breakdown voltage in a thin epitaxy-based power IC technology. The newly proposed device with the floating buried layer pulled back from the source side is able to realize an enhanced breakdown voltage (BV/sub dss/) without degrading the specific on-resistance (R/sub dson/A). BV/sub dss/-R/sub dson/A values like 47 V-0.28 m/spl Omega//spl middot/cm/sup 2/ or 93 V-0.82 m/spl Omega//spl middot/cm/sup 2/ have been realized with a conventional power IC technology without any added process complexity.
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A floating RESURF (FRESURF) LD-MOSFET device concept
V. Khemka, V. Parthasarathy, Ronghua Zhu et al. · IEEE Electron Device Letters · 2003 · 22 citations
Engineering, Electrical Engineering, Electronic Materials +13