IEEE Electron Device Letters · 2003 · 22 citations · 6 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsIntegrated Circuit DesignIntegrated Circuit DevicesMetal-oxide-semiconductor Field-effect TransistorsWide-bandgap Semiconductor DevicesBreakdown VoltageBreakdown Voltage OptimizationHigh-voltage BreakdownPower MosfetsSubstitutional Doping
This letter reports a novel device concept, which is an extension of the conventional reduced surface field (RESURF) concept. A heavily doped n-type floating region is introduced into the conventional device structure which allows the breakdown capability of the device to be increased significantly while at the same time making it high-side capable. This floating RESURF (FRESURF) device concept allows the realization of significantly higher breakdown voltage in a thin epitaxy based power integrated circuit (IC) technology. A FRESURF lateral double-diffused power MOS transistor is designed, fabricated and reported for the first time with breakdown voltages as high as 90 V as opposed to 55 V obtained from conventional device sharing same process and drift region doping.
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LDMOS implementation in a 0.35 μm BCD technology (BCD6)
Alessandro Moscatelli, A. Merlini, Giuseppe Croce et al. · 2002 · 60 citations