Concepedia

Naoto Fujishima

NF

14

Publications

283

Citations

11

H-Index

2002

Active since

Affiliations

Fuji Electric (Japan)(Current)

Hong Kong University of Science and Technology

University of Toronto

Naoto Fujishima is an author at Fuji Electric (Japan) specializing in engineering, electrical engineering, and microelectronics.

Top concepts

EngineeringMicroelectronicsElectrical EngineeringPower ElectronicsApplied PhysicsSemiconductorsPower SemiconductorsLow-power ElectronicsElectronic EngineeringHigh Voltage Engineering

Publications per year

2002–2022

14

Publications

14

A high-density low on-resistance trench lateral power MOSFET with a trench bottom source contact

Naoto Fujishima, A. Sugi, S. Kajiwara et al. · IEEE Transactions on Electron Devices · 2002 · 55 citations

Low-power Electronics, Trench Sidewalls, Electrical Engineering +8

A trench lateral power MOSFET using self-aligned trench bottom contact holes

Naoto Fujishima, C.A.T. Salama · 2002 · 39 citations

Cell Pitch, Electrical Engineering, Engineering +9

A 700 V lateral power MOSFET with narrow gap double metal field plates realizing low on-resistance and long-term stability of performance

Naoto Fujishima, M Saito, Akio Kitamura et al. · 2002 · 37 citations

Developed Mosfet, Electrical Engineering, Engineering +9

A high density, low on-resistance 700V class trench offset drain LDMOSFET (TOD-LDMOS)

Hideto Teranishi, Akio Kitamura, Yoshio Watanabe et al. · 2004 · 21 citations

High Density, Electrical Engineering, Engineering +6

A low on-resistance high voltage soi ligbt with oxide trench in drift region and hole bypass gate configuration

David Hongfei Lu, S. Jimbo, Naoto Fujishima · 2006 · 18 citations

Electrical Engineering, Engineering, High Voltage Engineering +12

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