2002 · 37 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesCmos Circuit DesignConverter TopologiesHigh-frequency Power ConversionIntegrated Circuit DesignPower SystemsWide Band Gap SemiconductorsHigh-voltage Power SystemsLong-term StabilityLow-power Cmos DesignLow-voltage Cmos DesignPower Converter DesignPower Mosfets
A 700 V lateral power MOSFET with a narrow gap double metal field plate structure is proposed. The MOSFET exhibits an improved specific on-resistance of 26 /spl Omega/ mm/sup 2/ and achieves extremely stable performance under long-term high-voltage operation. A power IC, which integrates the developed MOSFET using 1 /spl mu/m CMOS process, has successfully been applied to AC to DC converters in portable appliances.
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