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A high density, low on-resistance 700V class trench offset drain LDMOSFET (TOD-LDMOS)
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2004
Year
Unknown Venue
High DensityElectrical EngineeringEngineeringV Class TrenchClass TrenchDrain LdmosfetMicroelectronicsFabricated MosfetBeyond Cmos
We present a low on-resistance 700 V class trench offset drain LDMOSFET. A Noffset drain region is formed around the oxide-filled trench whose width and depth are both 20 /spl mu/m. The fabricated MOSFET exhibits a specific on-resistance of 10.4 /spl Omega/ mm/sup 2/, which is about 30% lower than the experimental best record so far.