Jan Šonský

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Michael J. Uren, Marco Silvestri, Markus Cäsar et al. · IEEE Electron Device Letters · 2014 · 126 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off

Melina Apostolidou, Mark P. van der Heijden, Domine Leenaerts et al. · IEEE Journal of Solid-State Circuits · 2009 · 59 citations

Engineering, Electrical Engineering, Microelectronics +16

Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

Matteo Meneghini, Isabella Rossetto, Fred Hurkx et al. · IEEE Transactions on Electron Devices · 2015 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

Giorgia Longobardi, Florin Udrea, S. J. Sque et al. · IEEE Electron Device Letters · 2014 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

Matteo Meneghini, Giulia Cibin, Marco Bertin et al. · IEEE Transactions on Electron Devices · 2014 · 46 citations

Engineering, Electrical Engineering, Materials Science +17