Fred Hurkx

Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

Sang‐Bum Kim, Byoungil Lee, Mehdi Asheghi et al. · IEEE Transactions on Electron Devices · 2011 · 71 citations

Engineering, Electrical Engineering, Materials Science +14

Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

Matteo Meneghini, Isabella Rossetto, Fred Hurkx et al. · IEEE Transactions on Electron Devices · 2015 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Anomalous behavior of surface leakage currents in heavily doped gated-diodes

Fred Hurkx, H.L. Peek, J.W. Slotboom et al. · IEEE Transactions on Electron Devices · 1993 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

Giorgia Longobardi, Florin Udrea, S. J. Sque et al. · 2014 · 12 citations

Engineering, Electrical Engineering, Materials Science +17