Anomalous behavior of surface leakage currents in heavily doped gated-diodes

Abstract

Anomalous voltage and doping dependence of surface leakage currents in heavily doped gated diodes is described and explained. By 2-D numerical device simulations, using a recombination model which includes trap-assisted tunneling, a good quantitative description of surface leakage current is obtained. This has resulted in a revision of the conventional description of these currents. Simple design criteria to avoid excessive surface leakage currents are presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>