Giorgia Longobardi

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Loizos Efthymiou, Giorgia Longobardi, Gianluca Camuso et al. · Applied Physics Letters · 2017 · 161 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

Loizos Efthymiou, Karthick Murukesan, Giorgia Longobardi et al. · IEEE Electron Device Letters · 2019 · 132 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

Giorgia Longobardi, Florin Udrea, S. J. Sque et al. · IEEE Electron Device Letters · 2014 · 48 citations

Engineering, Electrical Engineering, Materials Science +17

Diamond power devices: State of the art, modelling and figures of merit

Nazareno Donato, Nicolas Rouger, Julien Pernot et al. · Apollo (University of Cambridge) · 2019 · 36 citations · Full text

Engineering, Electrical Engineering, Materials Science +9

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi et al. · 2016 · 31 citations · Full text

Engineering, Electrical Engineering, Materials Science +17