Gianluca Camuso

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Loizos Efthymiou, Giorgia Longobardi, Gianluca Camuso et al. · Applied Physics Letters · 2017 · 152 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi et al. · 2016 · 31 citations · Full text

Sic Diode, Semiconductor Technology, Electrical Engineering +15

800V lateral IGBT in bulk Si for low power compact SMPS applications

T. Trajković, N. Udugampola, V. Pathirana et al. · 2013 · 27 citations

Electrical Engineering, Engineering, Advanced Packaging (Semiconductors) +11

The Effect of Incomplete Ionization on the Turn-Off Behavior of FS IGBTs

Alice Pei-Shan Hsieh, Gianluca Camuso, Florin Udrea et al. · IEEE Electron Device Letters · 2014 · 22 citations

Engineering, Turn-off Behavior, Power Electronics +16

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi et al. · Energies · 2017 · 22 citations · Full text

Electrical Engineering, Engineering, Power Device +12